Scholarlink

Abstract <p>This paper presents the results of the design, construction, and testing of a technological platform for atomic layer deposition (ALD) for the synthesis of various semiconductor, dielectric, metallized, and barrier thin-film structures with a thickness of &lt;100 nm, used in the field of micro- and nanoelectronics, with the possibility of in situ monitoring of mass and thickness growth processes with an accuracy of up to 0.3 ng/cm<sup>2</sup> and 0.037 Å/cycle, respectively. This technological platform minimizes the number of imported components by using electronics and vacuum fittings from domestic manufacturers, which in turn will significantly reduce the cost of this type of installation and make ALD technology accessible to most scientific and educational organizations in Russia.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Development and Testing of the Atomic Layer Deposition Technological Platform for the Synthesis of Micro- and Nanoelectronics Materials

  • 期刊论文

  • 发表日期：

    2025年2月1日

查看全文
  • R. R. Amashaev,
  • Sh. M. Isubgadzhiev,
  • M. Kh. Rabadanov,
  • I. M. Abdulagatov

摘要

Abstract

This paper presents the results of the design, construction, and testing of a technological platform for atomic layer deposition (ALD) for the synthesis of various semiconductor, dielectric, metallized, and barrier thin-film structures with a thickness of <100 nm, used in the field of micro- and nanoelectronics, with the possibility of in situ monitoring of mass and thickness growth processes with an accuracy of up to 0.3 ng/cm2 and 0.037 Å/cycle, respectively. This technological platform minimizes the number of imported components by using electronics and vacuum fittings from domestic manufacturers, which in turn will significantly reduce the cost of this type of installation and make ALD technology accessible to most scientific and educational organizations in Russia.