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Influence of Manufacturing Defects and Electrical Noise on the Evolution of an Optically Controlled Charge Qubit

  • A. V. Tsukanov,
  • I. Yu. Kateev

摘要

Abstract

We consider semiconductor charge qubits based on a double quantum dot, placed in an optical resonator—a defect in a photonic crystal (PhC), taking into account deviations of their parameters from the specified ones. The influence of a topological disorder in the structure of a PhC on the spectrum of a resonator and the effect of a stochastic field of external charges on the state of a qubit are analyzed. M-ethods for weakening these effects when controlling a qubit and ways to optimize the storage of its state are indicated.