Study of the Conductivity of Carbon Nanotubes Deposited on an Iridium-Silicon Silicide Substrate

The implementation of any elements at the nanometer level at this stage of development of nanoelectronics is possible only under the condition of integration with industrial microelectronics technology. The limiting factor is the implementation of the interface of two levels of technology: nano and micro. The crisis of metallic interconnects, which is entering a new phase and is related to an increase in delays in the wiring, is offsetting the advantages of nanostructures with a ballistic conductivity mechanism [1–4]. Nanotubes possess metallic or semiconductor type conductivity depending on the chirality angle in diameter. Accordingly, the former can act as ideal contacts for devices based on molecular or tunnel structures or radiation sources, while the latter are intended to act as active elements of nanoelectronics: rectifying diodes, transistors, chemical, and biological sensors.