Study of ALD-Deposited TaN Properties

The article presents the electrophysical characteristics of tantalum nitride films deposited by the ALD method. For the studies, the films were deposited on crystal silicon wafers with a surface orientation of 100. To enable measurements of the electrical resistance, the films were also deposited on thermally oxidized silicon wafers with an oxide thickness of 300 nm. Preliminary estimates of the spectral dependences of the refractive index and absorption coefficient of the films were performed by spectral ellipsometry. The specific electrical resistance was determined by the four-probe method at several points on the wafer. The study of the homogeneity of deposition was carried out by the method of spectral ellipsometry. Additionally, ellipsometric models are proposed that allow one to estimate the specific resistance and optical characteristics of the films, both during in situ growth and for a film tens of nanometers thick.