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Evolution of the Current–Voltage Characteristic of a Bipolar Memristor

  • A. V. Fadeev,
  • K. V. Rudenko

摘要

Abstract

A theoretical model is proposed that is capable of describing the current–voltage characteristic for a bipolar filament-type memristor during reversible switching. The model makes it possible to describe various types of current–voltage curves observed in experiments. It is established that the initially formed filament, after a series of switchings, acquires a stationary shape that repeatedly reproduces the current–voltage characteristic during further switchings.