Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier

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发表日期：

2024年6月1日

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A. S. Gusev,
A. O. Sultanov,
A. V. Katkov,
S. M. Ryndya,
N. V. Siglovaya,
A. N. Klochkov,
R. V. Ryzhuk,
N. I. Kargin,
D. P. Borisenko

摘要

Abstract

Using the method of molecular beam epitaxy with the plasma activation of nitrogen, experimental AlN/GaN heterostructures (HSs) with an ultrathin AlN barrier are obtained. The layer resistance of the optimized structures is less than 230 Ω/□. The scattering processes that limit the mobility of a two-dimensional electron gas (2DEG) in undoped AlN/GaN HSs with an ultrathin AlN barrier are studied. It is shown that in the range of n_s characteristic for AlN/GaN HEMT HSs (n_s > 1 × 10¹³ cm^–2), a noticeable contribution to the scattering of charge carriers is made by the roughness of the heterointerface.