Development of a Ge-MISFET Instrument Structure with an Induced p-Type Channel

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发表日期：

2024年6月1日

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N. A. Alyabina,
E. A. Arkhipova,
Yu. N. Buzynin,
S. A. Denisov,
A. V. Zdoroveishchev,
A. M. Titova,
V. Yu. Chalkov,
V. G. Shengurov

摘要

Abstract

The conditions for the growth of n-type Ge layers with the parameters required to create a Ge-MISFET with an induced p-type channel using the hot wire chemical vapor deposition (HW CVD) method are determined. The conditions for deposition using electron beam deposition and subsequent annealing of the subgate high-k dielectric ZrO₂:Y₂O₃ layers are optimized, allowing us to achieve a leakage current value of 5 × 10^–6 A/cm². For the developed device structure, some parameters of the Ge-MISFET are calculated, such as the channel length, maximum voltage between the sink and source, and breakdown voltage.