Research on High-Injection Heterojunction SPiN Diode Based on Solid-State Plasma

Solid-state plasma antennas are designed based on lateral surface PIN diodes (SPiN), with advantages such as frequency dynamic reconstruction, controllable beam shape, fast reconstruction performance, low profile, and flexible adaptability. They have broad application prospects in communication systems, radar systems, wireless spectrum management, and other fields. This paper proposes a new type of solid-state plasma SPiN diode with different heterostructures. By analyzing the effects of SiGe/Si heterostructures and Ge/GaAs heterostructures on the concentration and uniformity of solid-state plasma, a SPiN diode with a solid-state plasma concentration exceeding 10²⁰ cm^–3, uniform distribution, and superior system performance is obtained. This lays the foundation for the research of high-performance reconfigurable antenna systems.