Temporary Changes of Current Flow Mechanisms in Erbium-Doped Porous Silicon

The paper discusses the basic mechanisms of conductivity in silicon nano/micro structures. The object of the study is porous silicon doped with erbium impurity from an aqueous solution of erbium nitrate Er(NO₃)₃⋅5H₂O by temperature annealing in a diffusion furnace at a temperature of 800°C for 1 h. Comparative characteristics of current-voltage and capacitance-voltage correlations describing regular changes in the mechanisms of current flow and charge capture in the studied samples are presented. The results of the work qualitatively and quantitatively describe the temporary change in the electrical characteristics of porous silicon, which can be taken into account by technologists for better understanding the mechanisms of current transfer in luminescent structures of porous silicon with erbium ions, as well as in the study and manufacture of light-emitting diodes based on it.