Structural Features and Electrical Properties of Si(Al) Thermomigration Channels for High-Voltage Photoelectric Converters

The results of a study of the structural features and electrical properties of the end-to-end thermomigration (ThM) of the p-channels of Si(Al) in a silicon wafer are presented. Structural studies are carried out using X-ray methods of projection topography, diffraction reflection curves, and scanning electron microscopy (SEM). It is shown that the channel-matrix interface is coherent without the formation of misfit dislocations. The possibility is shown of using an array of the ThM of the p-channels of 15 elements for the formation of a monolithic photoelectric solar module in a Si(111)-based silicon wafer of p-channels 100 µm wide with walls in the plane \(\left( {1\bar {1}0} \right)\) . The monolithic solar module has a conversion efficiency of 13.1%, an open circuit voltage of 8.5 V, and a short circuit current density of 33 mA/cm².