Performance Analysis of Graphene Nanoribbon Based through Silicon Vias for 3D-ICs

Through silicon via is the key technology for 3D-Integrated Circuits (3D-ICs) which could vertically stack homogeneous or heterogeneous dies with the high performance and density. To evaluate the electrical characteristics of TSV at high-frequency transmission, the skin effect and surface roughness effect are necessary to be considered. However, these effects would significantly result in TSV equivalent resistance under the high operating frequency. Thus, it is important to investigate the Graphene nanoribbon (GNR) TSV which less skin effect intrinsically. In this work, we analyze the advantage of GNR as TSV compared with conventional filler materials such as copper (Cu), SWCNT, MWCNT, MCB. Further, we also simulate the signal integrity analysis of GNR based TSV, the resistance of MLGNR for different TSV widths and propagation delay and crosstalk induced delay for different TSV heights by using HSPICE simulator. In summary, GNR could be a promising TSV filler material at the high speed future ICs based on our study.