A New Approach of Simulating Low-Dose-Rate Radiation Effects in Bipolar Integrated Circuits

A model is proposed to explain the low-dose-rate effects when exposed to ionizing radiation in bipolar structures, taking into account the effects of the subthreshold defect formation in highly doped silicon layers. Variants for the degradation of the base current in a bipolar transistor are considered, taking into account the simultaneous action of surface radiation and displacement effects in the near-surface base region. The conditions for the enhanced low-dose-rate sensitivity (ELDRS) in bipolar structures are shown. The presented results of the analysis allow us to explain most of the observed experimental results.