Investigation of Dual-Channel Compensating Plasma Diode for Reconfigurable Antenna

This study delves into the radiation properties of a reconfigurable antenna that integrates both traditional single-channel SPiN diodes and dual-channel compensating SPiN diodes as core elements. The dual-channel SPiN diode compensates for the attenuation of carrier concentration at the midpoint of the intrinsic region, resulting in a carrier concentration exceeding 10¹⁸ cm^–3. The aim is to explore novel configurations of solid-state plasma antennas that have the potential to significantly improve radiation performance. The reconfigurable antenna is capable of operating in two distinct modes, specifically a low-frequency mode and a high-frequency mode, depending on the conducting state of the diode array. Through graphical analysis, it was observed that two reconfigured modes were successfully achieved, with relative bandwidths exceeding 13%. The incorporation of dual-channel compensating SPiN diodes led to notable performance improvements, as evident from a substantial reduction in the S11 parameter. These enhancements can be attributed to the intensified concentration and more uniform distribution of the solid-state plasma achieved by the dual-channel compensating devices.