Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter
摘要
Abstract
A set of transfer and output current–voltage characteristics of a bipolar transistor with a short-period superlattice in the emitter region are calculated. It is shown that the presence of a superlattice in the transistor structure leads to the formation of a negative differential conductivity region, which makes it possible to implement not only amplification but also the generation and multiplication of high-frequency oscillations.