Analysis of Nonlinear Distortions of DpHEMT Structures Based on a GaAs/In0.53Ga0.47As Compound with Double-Sided Delta-Doping
摘要
Abstract
This paper presents the results of studies of the capacitance-voltage characteristics (CVC) of GaAs/In0.53Ga0.47As HEMT before and after neutron irradiation with a fluence of (6.3 ± 1.3) × 1014 cm–2. Based on the experimentally obtained characteristics, the effective electron distribution profiles of the structure are calculated before and after the radiation impact. The effect of radiation defects on the δ-layers of the structure is analyzed.