Research on Memristor Effect in Crossbar Architecture for Neuromorphic Artificial Intelligence Systems
摘要
Abstract
This article presents the results of experimental studies of structures formed based on the crossbar architecture of memristor structures made of various materials. TiO2 is used as the working memristor layer. The following materials are used for the contact pads: Al, Ni, Cr, Mo, Ta, and Ag. In the course of experimental studies, the optimal combination of materials for the formation of crossbar memristor structures is revealed, which in the future can be used in devices of neuromorphic artificial intelligence systems.