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Abstract <p>The influence of the gettering process on the efficiency of heterojunction photovoltaic converters depending on the content of fast-diffusing transition metal impurities are numerically modeled. The data obtained are correlated with modifications in the silicate glass structure intentionally doped with Ni ions and with a Fe–Ni pair of ions, identified by the analysis of Raman spectra.</p>

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Modeling of Impurity Gettering in Silicon

  • 期刊论文

  • 发表日期：

    2026年5月25日

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  • A. S. Abramov,
  • E. V. Malchukova,
  • I. A. Starkov,
  • K. V. Emtsev,
  • I. A. Nyapshaev,
  • M. M. Andreenkov,
  • N. G. Tyurnina,
  • Z. G. Tyurnina

摘要

Abstract

The influence of the gettering process on the efficiency of heterojunction photovoltaic converters depending on the content of fast-diffusing transition metal impurities are numerically modeled. The data obtained are correlated with modifications in the silicate glass structure intentionally doped with Ni ions and with a Fe–Ni pair of ions, identified by the analysis of Raman spectra.