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Abstract <p>The roughness and defects of the side wall surfaces of high-aspect-ratio microstructures formed by cryogenic plasma etching of silicon in SF<sub>6</sub>/O<sub>2</sub> plasma are analyzed. Mask-dependent process is detected for different materials of hard mask (Al<sub>2</sub>O<sub>3</sub> and SiO<sub>2</sub>), since a mask under ion bombardment is a local source of O atoms flow into the near-mask region. A mechanism for development of the wall roughness is proposed using the modeling of anisotropic plasma etching of silicon in cryogenic conditions.</p>

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Mask Influence on the Near-Surface Region of Microstructures Made by Deep Cryogenic Etching of Silicon in SF6/O2 Plasma

  • 期刊论文

  • 发表日期：

    2026年4月1日

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  • K. V. Rudenko,
  • A. E. Melnikov,
  • A. V. Miakonkikh

摘要

Abstract

The roughness and defects of the side wall surfaces of high-aspect-ratio microstructures formed by cryogenic plasma etching of silicon in SF6/O2 plasma are analyzed. Mask-dependent process is detected for different materials of hard mask (Al2O3 and SiO2), since a mask under ion bombardment is a local source of O atoms flow into the near-mask region. A mechanism for development of the wall roughness is proposed using the modeling of anisotropic plasma etching of silicon in cryogenic conditions.