Scholarlink

Abstract <p>Using radio-frequency impedance spectroscopy in the 0.001–10 MHz range, the insulating properties of silicon-on-insulator (SOI) structures with nanometer-thick buried oxide (BOX) layers of SiO<sub>2</sub> or HfO<sub>2</sub> : Al<sub>2</sub>O<sub>3</sub> (15 : 1) on low-resistance Si substrates with TR-HR layers with traps (TR) and high resistance (HR) up to 2 μm thick were studied for their application in microwave and radio-photonic integrated circuits. These layers were formed by the implantation of CO<sup>+</sup> ions into Si substrates and rapid thermal annealing.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Impedance Spectroscopy of SOI Structures with BOX Nanolayers and a CO+ Implanted High-Resistance Region in Silicon Substrate

  • 期刊论文

  • 发表日期：

    2026年4月1日

查看全文
  • V. P. Popov,
  • V. E. Zhilitskiy,
  • V. A. Antonov,
  • F. V. Tikhonenko,
  • A. K. Gutakovskii

摘要

Abstract

Using radio-frequency impedance spectroscopy in the 0.001–10 MHz range, the insulating properties of silicon-on-insulator (SOI) structures with nanometer-thick buried oxide (BOX) layers of SiO2 or HfO2 : Al2O3 (15 : 1) on low-resistance Si substrates with TR-HR layers with traps (TR) and high resistance (HR) up to 2 μm thick were studied for their application in microwave and radio-photonic integrated circuits. These layers were formed by the implantation of CO+ ions into Si substrates and rapid thermal annealing.