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Abstract <p>Model studies of the switching process of power silicon diodes by a voltage pulse increasing at a rate of <i>dU</i>/<i>dt</i> = 1–10 kV/ns are carried out. It is found that during switching by a voltage pulse with <i>dU</i>/<i>dt</i> = 10 kV/ns, an increase in the specific resistance of the device ρ from 15 to 3000 Ω cm leads to an increase in the switching voltage from 3 to 5.5 kV and a reduction in the duration of the switching process from 150 to 50&#xa0;ps. It is shown that with an increase in the specific resistance, the method of filling the device structure with plasma changes: wave (15–40 Ω cm), hybrid (40–300 Ω cm) and uniform (&gt;300 Ω cm). At ρ&#xa0;&lt; 15 Ohm cm, the effect of fast (picosecond) switching is absent. A special feature of this work is its connection to a real experiment and considering the non–uniformity of current distribution over the area of the device. It is shown that the fraction of the area through which the current flows during switching increases from 0.15 to 0.7 with <i>dU</i>/<i>dt</i> = 10 kV/ns and from 0.03 to 0.3 with <i>dU</i>/<i>dt</i> = 3 kV/ns with increasing specific resistance from 15 to 3000 Ω cm. In consideration of the non–uniformity of current distribution leads to the appearance of a minimum in the dependence of the switching time on the specific resistance of the device at ρ = 50–100 Ω cm.</p>

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Switching Mechanisms of Semiconductor Devices under the Influence of a Voltage Pulse Increasing at a Rate of up to 10 kV/ns

  • 期刊论文

  • 发表日期：

    2025年9月1日

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  • S. N. Tsyranov,
  • O. E. Perminova

摘要

Abstract

Model studies of the switching process of power silicon diodes by a voltage pulse increasing at a rate of dU/dt = 1–10 kV/ns are carried out. It is found that during switching by a voltage pulse with dU/dt = 10 kV/ns, an increase in the specific resistance of the device ρ from 15 to 3000 Ω cm leads to an increase in the switching voltage from 3 to 5.5 kV and a reduction in the duration of the switching process from 150 to 50 ps. It is shown that with an increase in the specific resistance, the method of filling the device structure with plasma changes: wave (15–40 Ω cm), hybrid (40–300 Ω cm) and uniform (>300 Ω cm). At ρ < 15 Ohm cm, the effect of fast (picosecond) switching is absent. A special feature of this work is its connection to a real experiment and considering the non–uniformity of current distribution over the area of the device. It is shown that the fraction of the area through which the current flows during switching increases from 0.15 to 0.7 with dU/dt = 10 kV/ns and from 0.03 to 0.3 with dU/dt = 3 kV/ns with increasing specific resistance from 15 to 3000 Ω cm. In consideration of the non–uniformity of current distribution leads to the appearance of a minimum in the dependence of the switching time on the specific resistance of the device at ρ = 50–100 Ω cm.