Longitudinal Magnetoresistance of Ta/FeMn/Ta, Ta/Dy/Ta, and Ta/CoFe/Ta Nanostructures Caused by Spin Hall Effect
摘要
Abstract
For Ta/Fe50Mn50/Ta, Ta/Dy/Ta, and Ta/Co90Fe10/Ta nanostructures prepared by means of magnetron sputtering, a positive longitudinal magnetoresistance caused by the spin Hall effect has been found. The difference in the magnitude of magnetoresistance and the shape of magnetoresistive curves obtained for nanostructures with layers of metals with different types of magnetic ordering is interpreted under the assumption of different magnitude of purely spin current injected into the magnetics layer.