Scholarlink

Abstract <p>The temperature dependence of Raman scattering is investigated in nanowires of a dilute magnetic semiconductor Ge<sub>0.99</sub>Mn<sub>0.01</sub>. It is found that with increasing temperature a red shift (“softening”) of the optical LO-phonon line occurs at <i>T</i> ∼ 25 K. The observed behavior correlates with the data on the electron paramagnetic resonance of mobile charge carriers and indicates a strong interaction of holes with the phonon and magnetic subsystems.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Raman Scattering in Ferromagnetic Ge1 – xMnx Nanowires

  • 期刊论文

  • 发表日期：

    2025年2月1日

查看全文
  • S. V. Zaitsev

摘要

Abstract

The temperature dependence of Raman scattering is investigated in nanowires of a dilute magnetic semiconductor Ge0.99Mn0.01. It is found that with increasing temperature a red shift (“softening”) of the optical LO-phonon line occurs at T ∼ 25 K. The observed behavior correlates with the data on the electron paramagnetic resonance of mobile charge carriers and indicates a strong interaction of holes with the phonon and magnetic subsystems.