Frequency-Dependent Temperature Activation of Conductivity and Dielectric Constant of Magnetoelectric BiFeO₃

We presented the research results by impedance spectroscopy of frequency-dependent temperature activation of the conductivity and dielectric constant of the single-crystal magnetoelectric bismuth ferrite BiFeO₃, a promising functional material for RAM devices. The activation energies of low-temperature (110–300 K) processes of motion of charge carriers of the multiferroic structure and the logarithmic dependence of the critical temperatures between these processes on the frequency are determined in AC regime. It has been established that in this temperature range there is a correlation of AC characteristics with low- to high-temperature activation of the parameters of the BiFeO₃ crystal lattice.