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Compensation of Magnetostatic Interaction between Magnetic Layers in a Spin Tunnel Element

  • D. V. Vasilyev,
  • O. P. Polyakov,
  • P. A. Polyakov,
  • V. V. Amelichev,
  • S. I. Kasatkin,
  • D. V. Kostyuk

摘要

Abstract

A method is proposed to significantly reduce the influence of the magnetostatic magnetic field of the fixed magnetic layer on the free layer of a spin-tunnel element. The method is based on the use of a free layer the size of which exceeds that of the fixed layer, due to which a significant reduction in the influence of the magnetostatic field is achieved.