Chemical-Mechanical Polishing of CdZnTe Substrates to Achieve the Surface Morphology for the Synthesis of A²B⁶ Solid Solutions by Molecular Beam Epitaxy

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2024年9月1日

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A. A. Trofimov,
I. A. Denisov,
M. B. Grishechkin,
D. O. Tsaregorodtcev,
A. E. Goncharov,
K. A. Gladysheva,
V. A. Malygin,
A. M. Kosyakova

摘要

Abstract

The structural perfection of a HgCdTe epitaxial layer with a minimum number of extended structural defects is ensured by the molecular beam epitaxy method and by the growth on substrates matched to the crystal lattice parameter. CdZnTe (211)B substrates (Orion Association, Moscow, Russia) have a total thickness variation (TTV) of less than 1.5 μm and a surface roughness of R_a = 0.45 nm (rms = 0.58 nm).

Chemical-Mechanical Polishing of CdZnTe Substrates to Achieve the Surface Morphology for the Synthesis of A2B6 Solid Solutions by Molecular Beam Epitaxy

摘要

Chemical-Mechanical Polishing of CdZnTe Substrates to Achieve the Surface Morphology for the Synthesis of A²B⁶ Solid Solutions by Molecular Beam Epitaxy