Nuclear Scanning Microprobe Analysis of Silicon Carbide Epilayers
摘要
Abstract
The surfaces of homoepitaxial 4H-SiC layers were studied using a nuclear scanning microprobe in the Rutherford backscattering mode. Analysis of the state of the sample surfaces and the synthesis conditions showed that an increase in the silicon (Si) content in the upper layers of some samples precedes the formation of highly defective 4H-SiC layers.