Production of and Electronic Transport in Thin Films of Strontium Iridate

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发表日期：

2024年4月24日

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I. E. Moskal,
A. M. Petrzhik,
Yu. V. Kislinskii,
A. V. Shadrin,
G. A. Ovsyannikov,
N. V. Dubitskiy

摘要

Abstract

Epitaxial thin films of SrIrO₃ are studied, and data on their growth technology, crystal structure, and electronic transport are presented. For SrIrO₃ films deposited in a mixture of Ar and O₂ gases, the temperature dependence of resistance is of the metallic type. For films grown in pure argon, this dependence can be of both metallic and dielectric types, depending on deposition pressure and temperature conditions. The activation energy for dielectric samples is calculated and compared with the activation energy for Sr₂IrO₄ films.