Abstract <p>Junctionless field effect transistors heavily rely on control gate engineering to perform. Dielectric material types, scaling of gate oxide, gate metal work, among others all choose the performance of the entire device. This paper simulates and analyses a graphene nanoribbon double gate junctionless tunnel field effect transistor (DG-JL GNR-TFET) using a non-quasi-static small-signal model to investigate its radio frequency properties. The control gate engineering effect, dielectric choice, and oxide scaling has been evaluated in detail with regard to device performance. The experiment shows that as the thickness of the oxide is increased, the efficiency of tunneling increases and the cut-off frequency (<i>f</i>_T) reaches a maximum of 1.01 × 10¹² Hz when the oxide thickness is 1nm thick. Electrostatic control is further enhanced by high-<i>k</i> dielectrics with TiO₂ (2 nm) giving the best trade-off, with current ratio of 2.61 × 10¹², subthreshold swing of 20.75&#xa0;mV/dec, transconductance of 0.36 mS and gate capacitance of 0.065 fF at 1 V gate and drain voltages. Work function variation reveals an inverse dependence of frequency on work function, with the highest value (5.23 × 10¹¹ Hz) obtained at 4.1 eV. Comparative benchmarking against reported tunnel field effect transistors highlights the superior switching ratio and steep subthreshold swing of the proposed device, confirming its potential for low-power, high-efficiency radio frequency front-end circuits and emerging Internet of Everything applications.</p>