Abstract <p>According to calculations using well-known programs (e.g., TRIM), implantation of semiconductors with mid-energy ions leads to a peak-shaped distribution of the density of point defects along the depth of the implanted layer, which makes its properties nonuniform. Previously published Rutherford backscattering spectroscopy data on the density of point defects generated in implantation of GaAs with 250 keV N⁺ ions and partially removed by annealing were used to illustrate the process of forming the depth distribution of defect concentration that is uniform throughout the entire depth of the implanted layer. It is shown that at doses of implanted light ions exceeding ~ 1 × 10¹⁵ cm^–2, the distribution of defect density is transformed from peak-shaped to flat in a wide region of the implanted layer, extending beyond the projection depth. The straightening of the distribution occurs due to an increase in the recombination rate of interstitial atoms and vacancies in crossed cascades with increasing dose, as well as due to clustering of defects. Annealing not only reduces the density of defects many times over, preserving the shape of the profile in the main part, but also stimulates diffusion and noticeably saturates the deep layers of the crystalline material with defects.</p>