Abstract <p>Thermal and diffusion processes in silicon exposed to a repetitively pulsed titanium ion beam with high power density and submillisecond pulse duration were analyzed. Numerical modeling was used to resolve the spatiotemporal evolution of temperature fields in silicon and the depth profiles of the implanted dopant. The results quantify how the intensity of dopant diffusion transport in silicon depends on the temperature fields and ion-beam parameters. The redistribution of the implanted dopant under repetitively pulsed heating is characterized as a function of the pulse duration from 100 to 500 µs, ion current density from 0.5 to 2.5 A/cm², and pulsed power density from 5 to 25 kW/cm².</p>