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Abstract <p>In the presented work, the features of the oriented deposition of ZnO tetrapods on the rhombohedral plane of sapphire are studied. According to the scanning electron microscopy data, a ZnO coating is formed on the rhombohedral plane of sapphire, which is an ordered ensemble of rods and hierarchical structures. According to the X-ray diffraction data, the ZnO rods adjacent to the surface of the sapphire substrate are oriented in accordance with the orientation ratio (110)ZnOǁ (1<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\bar {1}\)</EquationSource> <!--SurfInv2570216Krasnova-m1--> </InlineEquation>2) sapphire. In the ordered ensemble of ZnO structures, an optical transmittance in the visible region of the spectrum of 30–35% is achieved. The band gap of the ordered ensemble of ZnO structures is determined to be 3.18 eV. It is demonstrated that under pulsed excitation, a significant proportion of the intensity is made up of the fast ultraviolet component of luminescence with a decay time of about 0.7–0.8 ns.</p>

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Oriented Deposition and X-ray Luminescence Properties of ZnO Tetrapods on Rhombohedral Sapphire Plane

  • 期刊论文

  • 发表日期：

    2025年12月1日

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  • V. V. Krasnova,
  • A. E. Muslimov,
  • I. D. Venevtsev,
  • M. P. Faradzheva,
  • A. S. Lavrikov,
  • L. A. Zadorozhnaya,
  • V. M. Kanevsky

摘要

Abstract

In the presented work, the features of the oriented deposition of ZnO tetrapods on the rhombohedral plane of sapphire are studied. According to the scanning electron microscopy data, a ZnO coating is formed on the rhombohedral plane of sapphire, which is an ordered ensemble of rods and hierarchical structures. According to the X-ray diffraction data, the ZnO rods adjacent to the surface of the sapphire substrate are oriented in accordance with the orientation ratio (110)ZnOǁ (1 \(\bar {1}\) 2) sapphire. In the ordered ensemble of ZnO structures, an optical transmittance in the visible region of the spectrum of 30–35% is achieved. The band gap of the ordered ensemble of ZnO structures is determined to be 3.18 eV. It is demonstrated that under pulsed excitation, a significant proportion of the intensity is made up of the fast ultraviolet component of luminescence with a decay time of about 0.7–0.8 ns.