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Abstract <p>An equivalent circuit scheme with lumped parameters for a magnetic junction formed in an array of two-layer nanowires is considered. In this scheme, the flow of electrons with relaxing spins is represented by a relaxation current flowing through an imaginary resistance. The possibility of a spin impedance arising at the interface between the layers due to the inertia of the spin relaxation process has been shown in terms of the equivalent circuit. The nonthermal nature of the radiation observed during spin injection by current and the possible manifestation of spin impedance, when the radiation power increases with decreasing current, have been experimentally demonstrated.</p>

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Spin Impedance and THz Radiation in Magnetic Junctions of Nanowires

  • 期刊论文

  • 发表日期：

    2025年12月1日

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  • D. L. Zagorskiy,
  • I. M. Doludenko,
  • S. G. Chigarev,
  • E. A. Vilkov,
  • V. M. Kanevskii,
  • A. I. Panas

摘要

Abstract

An equivalent circuit scheme with lumped parameters for a magnetic junction formed in an array of two-layer nanowires is considered. In this scheme, the flow of electrons with relaxing spins is represented by a relaxation current flowing through an imaginary resistance. The possibility of a spin impedance arising at the interface between the layers due to the inertia of the spin relaxation process has been shown in terms of the equivalent circuit. The nonthermal nature of the radiation observed during spin injection by current and the possible manifestation of spin impedance, when the radiation power increases with decreasing current, have been experimentally demonstrated.