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Abstract <p>Silicon-carbon films were deposited by electron beam evaporation of silicon carbide in helium, nitrogen and propane in the fore-vacuum pressure range of 3–4 Pa at various substrate temperatures. The composition, as well as optical and mechanical properties of the films were measured. We find that the composition of the films changes towards increased silicon content as the substrate temperature increases. This increases the film hardness and reduces the optical band gap. When deposited in helium and nitrogen, the films are enriched in silicon. Deposition in propane makes it possible to deposit films with a composition approaching stoichiometric.</p>

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Effect of Substrate Temperature on the Composition and Properties of Films Deposited by Electron Beam Evaporation of Silicon Carbide in the Fore-Vacuum Pressure Range

  • 期刊论文

  • 发表日期：

    2025年8月1日

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  • V. A. Burdovitsin,
  • I. Y. Bakeev,
  • L. J. Ngong A Kiki,
  • E. M. Oks,
  • F. A. Sukhovolsky

摘要

Abstract

Silicon-carbon films were deposited by electron beam evaporation of silicon carbide in helium, nitrogen and propane in the fore-vacuum pressure range of 3–4 Pa at various substrate temperatures. The composition, as well as optical and mechanical properties of the films were measured. We find that the composition of the films changes towards increased silicon content as the substrate temperature increases. This increases the film hardness and reduces the optical band gap. When deposited in helium and nitrogen, the films are enriched in silicon. Deposition in propane makes it possible to deposit films with a composition approaching stoichiometric.