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Abstract <p>A method based on perturbation theory for describing ion–atom ionization collisions and an algorithm for statistical modeling of secondary electron trajectories are proposed for calculating the electron emission coefficient from a structureless solid target. The main contribution to the number of electrons emitted from the surface comes from electrons with energies <i>E</i><sub>e</sub> &lt; 50 eV. Only a small target layer with a thickness of 20–40 Å determines the number of electrons emitted from the surface. If the target thickness exceeds this value, the electron emission coefficient does not depend on the target thickness. The change in the energy and charge of a fast ion in such a thin layer can be ignored, and the energy and charge of an ion emitted from the target can be used to estimate the number of secondary electrons.</p>

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Calculation of the Electron Emission Coefficient during Fast Ion Passage through Silicon

  • 期刊论文

  • 发表日期：

    2025年8月1日

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  • N. V. Novikov,
  • N. G. Chechenin,
  • A. A. Shirokova

摘要

Abstract

A method based on perturbation theory for describing ion–atom ionization collisions and an algorithm for statistical modeling of secondary electron trajectories are proposed for calculating the electron emission coefficient from a structureless solid target. The main contribution to the number of electrons emitted from the surface comes from electrons with energies Ee < 50 eV. Only a small target layer with a thickness of 20–40 Å determines the number of electrons emitted from the surface. If the target thickness exceeds this value, the electron emission coefficient does not depend on the target thickness. The change in the energy and charge of a fast ion in such a thin layer can be ignored, and the energy and charge of an ion emitted from the target can be used to estimate the number of secondary electrons.