Abstract <p>When irradiating <i>n</i>-GaN obtained by the method of metal organic vapor phase epitaxy (MOVPE) with electrons with an energy of 0.9 MeV, the values of the carrier removal rate η_e for room temperature were established for the first time within the framework of the Van der Pauw method. At an initial (before irradiation) electron concentration of 1.87 × 10¹⁷ cm^–3, the values of η_e were 0.023 and 0.054 cm^–1 at room temperature (293 K) for doses Φ_<i>n</i> = 1.7 × 10¹⁷ and 3.7 × 10¹⁷ cm^–2, respectively. With temperature decrease, the η_e value increases: at <i>T</i> = –55°C, the η_e values are 0.064 and 0.086 cm^–1 for doses of 1.7 × 10¹⁷ and 3.7 × 10¹⁷ cm^–2, respectively. The maximum mobility value in nonirradiated samples is 650 cm²/Vs. After irradiation with a dose of Φ_<i>n</i> = 3.7 × 10¹⁷ cm^–2, the maximum mobility value decreases to 530 cm²/Vs. The change in mobility under the influence of irradiation is reliably traced at temperatures of <i>T</i> ≤ 260 K (1000/<i>T ≈</i> 3.85).</p>