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Abstract <p>The Cu–Si system is important for a wide range of technological applications. This work is devoted to the study of the influence of copper content on the formation of silicon suboxides phases in Cu–Si films obtained by ion-beam sputtering. According to X-ray diffraction and ultrasoft X-ray emission spectroscopy data, in a film with a low copper content (~15 wt %) silicon is partially in an amorphous state and partially oxidized, forming a SiO<sub>0.47</sub> suboxide. In films with a high copper content (65 wt %), Cu<sub>3</sub>Si phase is formed, which leads to the formation of SiO<sub>2</sub> dioxide and SiO<sub>0.8</sub> suboxide phases in both near-surface and deeper layers. X-ray photoelectron spectroscopy indicates the formation of predominantly silicon-oxygen tetrahedra of the Si–Si<sub>3</sub>O and SiO<sub>4</sub> types for Cu ~ 15 wt % and more oxygen-rich Si–Si<sub>2</sub>O<sub>2</sub> silicon-oxygen tetrahedra for Cu ~ 65 wt % both on the surface and in deep layers of Cu–Si films.</p>

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The Effect of Copper Content on the Formation of Silicon Suboxides Phases in Cu–Si Films Obtained by Ion-Beam Sputtering

  • 期刊论文

  • 发表日期：

    2025年2月1日

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  • K. A. Barkov,
  • V. A. Terekhov,
  • E. S. Kersnovsky,
  • I. V. Polshin,
  • S. A. Ivkov,
  • A. I. Chukavin,
  • S. V. Rodivilov,
  • N. S. Buylov,
  • D. N. Nesterov,
  • V. V. Pobedinsky,
  • A. K. Pelagina,
  • K. M. Moiseev,
  • A. E. Nikonov,
  • A. V. Sitnikov

摘要

Abstract

The Cu–Si system is important for a wide range of technological applications. This work is devoted to the study of the influence of copper content on the formation of silicon suboxides phases in Cu–Si films obtained by ion-beam sputtering. According to X-ray diffraction and ultrasoft X-ray emission spectroscopy data, in a film with a low copper content (~15 wt %) silicon is partially in an amorphous state and partially oxidized, forming a SiO0.47 suboxide. In films with a high copper content (65 wt %), Cu3Si phase is formed, which leads to the formation of SiO2 dioxide and SiO0.8 suboxide phases in both near-surface and deeper layers. X-ray photoelectron spectroscopy indicates the formation of predominantly silicon-oxygen tetrahedra of the Si–Si3O and SiO4 types for Cu ~ 15 wt % and more oxygen-rich Si–Si2O2 silicon-oxygen tetrahedra for Cu ~ 65 wt % both on the surface and in deep layers of Cu–Si films.