Vacuum Annealing of Cr–SiС(4H) Schottky Diodes

The effect of isochronous annealing in vacuum at temperatures of 100–400°C on the forward and reverse current-voltage characteristics of Cr–SiC(4H) Schottky diodes is studied. Diodes of different sizes are manufactured using the same technology based on one lightly doped (~4 × 10¹⁴ cm^–3) epitaxial layer. The current-voltage characteristics are close to ideal in all cases, but their significant spread before annealing, a decrease in the spread, and a shift to the low-voltage region as a result of annealing at 400°C were found. It is assumed that the main diode is in all cases is shunted by a parasitic diode, the barrier height of which is reduced as a result of annealing.