The Influence of Heat Treatments on the Temperature Dependence of Dislocation Luminescence in Ion-Implanted Silicon
摘要
Abstract
The work continues the series of studies of the effect of the anomalous temperature dependence of the luminescence of dislocation structures formed by irradiating silicon with Si+ ions and subsequent additional implantation of B+ ions. It was found that thermal treatments of the samples lead to a strong shift in the high-temperature maximum intensity of the D1 line on the temperature dependence. It has been shown that the duration of heat treatments affects the intensity of this maximum, its position, and the shape of the luminescence temperature dependence curve. A possible mechanism for the observed temperature behavior of dislocation luminescence is discussed.