The Influence of Charged Conductive Atomic-Force Microscope Tip on Regimes of Electronic Transport in Diffusive Doped InAs Nanowire
摘要
Abstract
We performed investigations of impact of charged conductive atomic-force microscope (AFM) tip on magnetotransport in Si-doped InAs nanowire at helium temperatures. We demonstrate new type of influence of AFM tip, i.e. the tip does not reveal itself as an additional scattering center only, but it changes the dimension of fractal behavior of magneto-conductance dependencies of InAs nanowire.