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Self-Forming Silicon Nitride Nanomask and Its Applications

  • V. K. Smirnov,
  • D. S. Kibalov,
  • P. A. Lepshin,
  • I. V. Zhuravlev,
  • G. F. Smirnova

摘要

Abstract

A self-forming wave-ordered structure arises on the surface of single-crystal or amorphous silicon during its sputtering with an inclined beam of nitrogen ions. The wave-ordered structure is a solid nanomask, a dense array of silicon nitride nanostripes with a period in the range of 30–90 nm. The induced spatial coherence of the nanomask due to the formation of sharp geometric boundaries on silicon surface in the areas of ion bombardment is considered. Based on the nanomask and etching processes (wet and dry), various nanostructures are formed, which are used in different high technologies. Prototypes of solar cells, nanowire grid polarizers, and nanostructured silicon substrates for surface-enhanced Raman spectroscopy have been created. The results of a study of the initial stages of lysozyme protein crystallization on nanostructured silicon substrates are presented.