Effect of the Implantation of \({\text{O}}_{{\text{2}}}^{ + }\) Ions on the Composition and Electronic Structure of CdS Films

A method of low-energy ion implantation is used for the first time to create oxide layers on the surface of a CdS material. After annealing at a temperature of 800 K of CdS implanted with \({\text{O}}_{2}^{ + }\) ions with an energy of E₀ = 1 keV at a dose of D_sat ≈ 8 × 10¹⁶ cm^–2, a three-component film of CdO_0.7S_0.3 is formed, and after annealing at 900 K a CdO film is formed. Using Auger-electron spectroscopy, photoelectron spectroscopy, and light-absorption spectroscopy, the composition, parameters of the energy bands, optical parameters, and densities of state of valence electrons of CdO_0.7S_0.3 and CdO nanofilms are determined. The results of the study allow one to consider the possibility of using CdO_0.7S_0.3 films as transparent films and contact layers in various devices including solar cells.