Study of SiO₂ Films Implanted with ⁶⁴Zn⁺ Ions and Oxidized at Elevated Temperatures

The results of studying SiO₂ films implanted with ⁶⁴Zn⁺ ions with a dose of 5 × 10¹⁶ cm^–2 at energies of 20 and 120 keV and isochronously oxidized for 1 h at temperatures from 400 to 800°C with a step of 100°C are presented. The profiles of Zn and its oxide are studied using Rutherford backscattering and time-of-flight secondary-ion mass spectrometry. The chemical state of zinc and the phase composition of the film are determined by Auger electron spectroscopy and Raman scattering. It is found that after implantation, the zinc distribution has two maxima at depths of 20 and 85 nm, and after annealing at 700°C there is a broadened maximum at a depth of 45 nm. After implantation, a mixture of Zn and ZnO phases is formed in the sample. After annealing at 700°C, only the ZnO phase is formed in the sample, the distribution profile of which has a broadened peak at 45 nm.