Electron Distribution Near the Fast-Ion Track in Silicon
摘要
Abstract
In this paper, we propose a model to describe the distribution of electrons near the track of a fast ion. The dependence of the fast-electron flux on time, layer depth, and radial variable is modeled taking into account the statistical weight of each trajectory. The pulse duration in the electron-flux distribution was found to be fractions of ps while the radial size of the cylindrical region, where the transport of fast electrons occurs, reaches tens of angstroms.