Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

The morphology and surface composition of silicon are experimentally studied using scanning-electron microscopy, X-ray phase analysis, and Raman spectroscopy. The spectral characteristics of silicon doped with impurity atoms of phosphorus and gallium are investigated. In a silicon lattice doped simultaneously with gallium and phosphorus atoms, impurity atoms form binary complexes. Experimental determination of the concentration of impurity atoms of gallium and phosphorus reveals a significant increase in the concentration of gallium compared to its fundamental solubility in silicon. It is demonstrated that a rather high concentration of such elementary cells can lead to a substantial change in the electrical parameters of silicon, i.e., the possibility of obtaining a new material based on silicon.