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Linear thermal expansion coefficient of monocrystalline silicon

  • Yu. M. Kozlovskii,
  • S. V. Stankus

摘要

The paper presents the results of dilatometric measurements for thermal expansion of monocrystalline silicon for the temperature range of 100 – 1373 K. The temperature dependencies for thermal properties of material are calculated. The look-up tables for a wide temperature range for a solid state are calculated.