Gas-jet synthesis of diamond coatings on silicon substrates

The synthesis of diamond coatings on silicon substrates using a gas-jet method with application of a high-speed jet to transport a gas mixture, activated in a microwave discharge, is studied. The coatings are synthesized from a mixture of hydrogen, methane, and argon. The possibility of maintaining the integrity of the silicon substrate under conditions of gas-jet deposition at high temperatures is shown. The rate of diamond synthesis on a silicon substrate exceeded the rate, achieved earlier in gas-jet experiments with activation in microwave plasma without adding argon, as well as during deposition from a hydrogen-methane-argon mixture at lower substrate temperatures.