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Abstract <p>High-purity arsenic is required for the synthesis of A<sup>III</sup>B<sup>V</sup> compounds and their solid solutions, which serve as the basis for semiconductor heteroepitaxial structures used in optoelectronics, laser technology, solar energy and microelectronics. In this regard, calorimetric studies were conducted to examine the effects of temperature and arsenic acid concentration on the thermal properties (specific heat capacity, thermal conductivity and thermal diffusivity) of solutions in the H<sub>3</sub>AsO<sub>4</sub>–H<sub>2</sub>O system over a wide range of temperatures (20–80°C) and H<sub>3</sub>AsO<sub>4</sub> concentrations (18.95–81.45 wt %). The obtained data may be useful for designing the arsine electrochemical synthesis for the subsequent high-purity arsenic production.</p>

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Thermal Properties of Solutions in the H3AsO4–H2O System

  • 期刊论文

  • 发表日期：

    2025年2月1日

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  • T. K. Menshchikova,
  • K. S. Nikonov,
  • M. N. Brekhovskikh,
  • L. A. Vaimugin,
  • O. E. Myslitskii

摘要

Abstract

High-purity arsenic is required for the synthesis of AIIIBV compounds and their solid solutions, which serve as the basis for semiconductor heteroepitaxial structures used in optoelectronics, laser technology, solar energy and microelectronics. In this regard, calorimetric studies were conducted to examine the effects of temperature and arsenic acid concentration on the thermal properties (specific heat capacity, thermal conductivity and thermal diffusivity) of solutions in the H3AsO4–H2O system over a wide range of temperatures (20–80°C) and H3AsO4 concentrations (18.95–81.45 wt %). The obtained data may be useful for designing the arsine electrochemical synthesis for the subsequent high-purity arsenic production.