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<p><b>Abstract</b>—A new approach to synthesizing antimony-substituted indium–gallium–zinc oxide (IGZO) is proposed. The synthesis of doped IGZO is based on our earlier work on optimizing a complexing agent in the metal–nitrate–chelate method. The use of tartaric acid as a complexing agent is found to successfully introduce antimony into the IGZO matrix without forming foreign crystalline phases. In contrast, glycerol and ethylene glycol, which are effective for synthesizing pure IGZOs, are unsuitable for synthesizing antimony-substituted IGZO, since they lead to the aggregation of crystalline indium oxide. The phase composition and morphology of samples subjected to heat treatment in the temperature range from 500 to 1300°C are studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The material is amorphous (as determined by XRD) in the sintering temperature range 500–700°C, and crystallinity increases at a sintering temperature of 900°C. At 1100°C, indium oxide aggregation is observed; it is eliminated during heat treatment at 1300°C. Energy dispersive spectroscopy (EDS) revealed no regions of aggregation for any of the main elements in the materials sintered at 500–900°C. Using the composition In<sub>0.8</sub>(Sb<sub>1/3</sub>Zn<sub>2/3</sub>)<sub>0.2</sub>GaZnO<sub>4</sub> as an example, we show that the doping approach is feasible: EDS data demonstrate that antimony is present in the material, and changes in the lattice parameters are detected (<i>a</i> = <i>b</i> = 3.275 ± 0.003, <i>c</i> = 26.13 ± 0.02). High-temperature sintering results in micron-sized particles in a sample, making the final material unsuitable for use as “ink” because of too large particle sizes and the need for grinding technologies. This work is demonstrative and shows the fundamental possibility of synthesizing antimony-substituted IGZO, which is promising for printed microelectronics.</p>

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On the Possibility of Synthesizing Polycrystalline Antimony-Doped Indium–Gallium–Zinc Oxide

  • 期刊论文

  • 发表日期：

    2025年2月1日

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  • G. M. Zirnik,
  • T. A. Markin,
  • E. S. Anannikov,
  • N. S. Zhidkov,
  • A. S. Chernukha,
  • I. A. Solizoda,
  • G. M. Boleiko,
  • S. A. Gudkova,
  • E. V. Korostylev,
  • D. A. Vinnik

摘要

Abstract—A new approach to synthesizing antimony-substituted indium–gallium–zinc oxide (IGZO) is proposed. The synthesis of doped IGZO is based on our earlier work on optimizing a complexing agent in the metal–nitrate–chelate method. The use of tartaric acid as a complexing agent is found to successfully introduce antimony into the IGZO matrix without forming foreign crystalline phases. In contrast, glycerol and ethylene glycol, which are effective for synthesizing pure IGZOs, are unsuitable for synthesizing antimony-substituted IGZO, since they lead to the aggregation of crystalline indium oxide. The phase composition and morphology of samples subjected to heat treatment in the temperature range from 500 to 1300°C are studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The material is amorphous (as determined by XRD) in the sintering temperature range 500–700°C, and crystallinity increases at a sintering temperature of 900°C. At 1100°C, indium oxide aggregation is observed; it is eliminated during heat treatment at 1300°C. Energy dispersive spectroscopy (EDS) revealed no regions of aggregation for any of the main elements in the materials sintered at 500–900°C. Using the composition In0.8(Sb1/3Zn2/3)0.2GaZnO4 as an example, we show that the doping approach is feasible: EDS data demonstrate that antimony is present in the material, and changes in the lattice parameters are detected (a = b = 3.275 ± 0.003, c = 26.13 ± 0.02). High-temperature sintering results in micron-sized particles in a sample, making the final material unsuitable for use as “ink” because of too large particle sizes and the need for grinding technologies. This work is demonstrative and shows the fundamental possibility of synthesizing antimony-substituted IGZO, which is promising for printed microelectronics.