Scalable Technique for Synthesizing an In–Ga–Zn–O Oxide Material Promising for Electronics
摘要
Abstract—The solid-phase synthesis of indium–gallium–zinc oxide (IGZO) with the formula InGaZnO4 is studied. The synthesis is performed from the In2O3, Ga2O3, and ZnO oxides at a temperature of 1400°C for 24 h in an air atmosphere and is followed by rapid air cooling. The single-phase state of the resulting ceramic pellet is confirmed by X-ray diffraction, infrared Fourier transmission spectroscopy, and Raman spectroscopy. The dimensional characteristics, the morphology of the synthesized sample, and the distribution of elements are estimated using scanning electron microscopy and energy dispersive X-ray spectroscopy. The unit cell parameters are determined using the Rietveld full-profile analysis.