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Abstract <p>Thermodynamic modeling of the film synthesis process from the gas phase in the Co–Si–C–H system was performed during the decomposition of cobaltocene in a mixture with silane and hydrogen to plot chemical vapor deposition (CVD) diagrams. It was assumed that the process occurs in a quasi-equilibrium regime and that the film and gas phase composition in the reactor correspond to the minimum Gibbs energy in the system. It was shown that various phase complexes containing silicon carbide and cobalt silicides can be obtained in the studied system. Depending on the CVD process parameters (reactor temperature, composition of the initial gas mixture), the following complexes can be obtained: CoSi + SiC, CoSi + SiC + C, CoSi<sub>2</sub> + CoSi + SiC, and CoSi<sub>2</sub> + SiC + Si. The calculation results can be used to develop a gas-phase process for the formation of coatings consisting of these phases.</p>

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Thermodynamic Modeling of Phase Formation in the Co–Si–C–H System

  • 期刊论文

  • 发表日期：

    2026年3月1日

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  • V. A. Shestakov,
  • M. L. Kosinova

摘要

Abstract

Thermodynamic modeling of the film synthesis process from the gas phase in the Co–Si–C–H system was performed during the decomposition of cobaltocene in a mixture with silane and hydrogen to plot chemical vapor deposition (CVD) diagrams. It was assumed that the process occurs in a quasi-equilibrium regime and that the film and gas phase composition in the reactor correspond to the minimum Gibbs energy in the system. It was shown that various phase complexes containing silicon carbide and cobalt silicides can be obtained in the studied system. Depending on the CVD process parameters (reactor temperature, composition of the initial gas mixture), the following complexes can be obtained: CoSi + SiC, CoSi + SiC + C, CoSi2 + CoSi + SiC, and CoSi2 + SiC + Si. The calculation results can be used to develop a gas-phase process for the formation of coatings consisting of these phases.